| PART |
Description |
Maker |
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MA2C856 |
Band Switching Diodes SILICON, VHF BAND, MIXER DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BF660 Q62702-F982 |
From old datasheet system
PNP Silicon RF Transistor (For VHF oscillator applications) VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MA2S304 |
Silicon epitaxial planar type VHF BAND, 27.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| BB731S BB731 |
From old datasheet system
Silicon epitaxial planar capacitance diodes with very wide effective capacitance variation for tuning the VHF range 41 ... 170 MHz in hyperband televi
DIODE VHF BAND, 50 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-2, Variable Capacitance Diode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Semiconductors
|
| 1SV216TPH4 1SV216TPHR4 |
VHF-UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
|
